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Samsung and SK Hynix reportedly upgrade Chinese factories for AI RAM chips

Samsung Electronics and SK Hynix are reportedly upgrading their Chinese plants to produce higher‑layer 3D NAND chips for AI data centers, according to Reuters. Samsung’s Xian factory, which makes about 40 % of the company’s global output, plans to switch to 286‑layer flash chips by year‑end, up from its current 200‑layer chips. SK Hynix’s Dalian plant aims for 240‑layer or more chips, compared…

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Key points

  • Samsung Xian plant to produce 286‑layer flash chips by year‑end
  • SK Hynix Dalian plant targeting 240‑layer or more chips
  • U.S. export controls require licenses for U.S.‑built equipment in China

The moves come amid growing competition from Chinese makers such as CXMT, which posted $22.41 billion in revenue and $11.57 billion in net profit in the first half of 2026 and is eyeing 3D NAND for SSDs. U.S. export controls imposed in 2022 require Samsung and SK Hynix to obtain licenses to install U.S.‑built equipment in China, a hurdle that may slow the upgrades.

Both companies say they are consulting U.S. authorities, but the licensing step has complicated their plans to meet the rising demand for advanced AI memory.

Full story from Tom's Hardware · by Oliver HaslamOpen source ↗

Samsung and SK Hynix are upgrading Chinese factories to produce advanced RAM chips as AI data center competition ramps up

Tom's Hardware · 21 October 2026

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This text was published by Tom's Hardware and written by Oliver Haslam. It is reproduced here with attribution so you can read it in full; the rights remain with the publisher. Read it at the source ↗

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The headline, key points and digest above were generated by Digest AI's editorial model from the linked sources. Automated summaries can contain errors: the sources are the record. Spotted a mistake? Tell us. Published by Martin K., who runs Digest AI and handles corrections.

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