TSMC will reportedly supply 3nm base dies for Nvidia's NVHBM chips
Nvidia announced its NVHBM custom high‑bandwidth memory line in August 2026, aiming to standardise how HBM is built by moving its own memory controller into the base die. The company says the design could deliver up to a 30% bandwidth boost and 15% lower power consumption compared with standard HBM4E.
Key points
- TSMC will reportedly provide its 3nm process for the base dies of Nvidia’s NVHBM memory stacks.
- Samsung, SK Hynix and Micron are directed to use TSMC’s 3nm technology for NVHBM base dies, with Micron targeting volume production by 2027.
- Nvidia claims NVHBM could boost memory bandwidth up to 30% and cut power consumption by 15% versus HBM4E.
According to the October 18 report, Taiwan Semiconductor Manufacturing Company will reportedly provide its 3nm process technology for the base dies of NVHBM stacks. Samsung Electronics, SK Hynix and Micron have been directed to use TSMC’s 3nm node for their NVHBM base dies, with Micron confirming plans to outsource both HBM4E and NVHBM base dies to TSMC and targeting volume production by 2027. Samsung’s involvement marks the first time it will work with TSMC on HBM base‑die manufacturing.
TSMC to build base dies for Nvidia’s custom HBM chips
cryptobriefing.com · 18 October 2026
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